Our SiC MOSFETs are designed and manufactured with superior gate oxide reliability, ensuring they can withstand the required voltage and temperature stresses, which reduces the risk of device failure and increases device lifetime. Additionally, our MOSFETs feature very fast and rugged intrinsic diode which eliminates the need for paralleling external diode. Our MOSFETs are 100% avalanche tested to ensure that they meet the most stringent requirements of industrial and automotive applications.